High Rate Deep Si Etching using Capacitively Coupled Plasma
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Journal of the Vacuum Society of Japan
سال: 2010
ISSN: 1882-4749,1882-2398
DOI: 10.3131/jvsj2.53.429